 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TGA4502-SCC K Band High Power Amplifier Key Features * * * * * * * * 17-27 GHz Application Frequency Range 22 dB Nominal Gain 29 dBm Nominal P1dB 37 dBm Nominal OTOI 15 dB Nominal Return Loss 0.25 um pHEMT 2MI Technology Bias 7 V @ 760 mA Chip Dimensions 1.52 x 3.29 x 0.1 mm Product Description The TriQuint TGA4502-SCC is a compact High Power Amplifier MMIC for K-band applications. The part is designed using TriQuint's proven standard 0.25 um gate power pHEMT production process. The TGA4502-SCC provides a nominal 29 dBm of output power at 1 dB gain compression from 17-27 GHz with a small signal gain of 22 dB. The part is ideally suited for low cost emerging markets such as K-band Satellite Communications, Point-to-Point Radio, and Point-to-Multi Point Communications. The TGA4502-SCC is 100% DC and RF tested on-wafer to ensure performance compliance. P1dB (dBm) Primary Applications * * * K Band Sat-Com Point-to-Point Radio Point-to-Multipoint Communications Fixtured Measured Performance Bias Conditions: Vd = 7 V, Id = 760 mA 35 33 31 29 27 25 23 21 17 18 19 20 21 22 23 24 25 26 27 P1dB Psat Frequency (GHz) 30 24 18 12 G ain 30 24 12 6 18 6 0 -6 -12 -18 -24 -30 Inpu t t Output 0 -6 -12 -18 -24 -30 18 20 22 24 26 28 30 32 14 16 Frequency (G Hz) 1 TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com Oct 2008 (c) Rev - Return Loss (dB) Gain (dB) TGA4502-SCC TABLE I ABSOLUTE MAXIMUM RATINGS 1/ SYMBOL V + PARAMETER Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Mounting Temperature (30 Seconds) Storage Temperature VALUE 8V -5V TO 0V 1100 mA 28 mA 26 dBm 8.8 W 200 C 320 C -65 to 150 C NOTES 2/ VI+ | IG | PIN PD 2/ 2/ 2/, 3/ 4/, 5/ Tchannel Channel Temperature 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and/or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. Junction operating temperature will directly affect the device median lifetime. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 2/ 2 TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com Oct 2008 (c) Rev - TGA4502-SCC TABLE II DC PROBE TEST (TA = 25 C, Nominal) SYMBOL Idss, Q1 G m, Q1 Vp, Q1,2, 3-6, 7-10 VBVGD, Q1-10 VBVGS, Q1,2,3-6,7-10 PARAMETER Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Drain Breakdown Voltage Gate-Source MINIMUM 60 132 -1.5 -30 -30 MAXIMUM 282 318 -0.5 -13 -13 UNIT mA mS V V V Note: Q1 & Q2 are 600 um FETs. Q3-6 & Q7-10 are 2400 um FETs. Q1-10 is a 6000 um FET. TABLE III RF CHARACTERIZATION TABLE (TA = 25 C, Nominal) Vd = 7 V, Id = 760 mA SYMBOL Gain PARAMETER Small Signal Gain TEST CONDITION F = 17 - 18 GHz F = 17.5, 18 GHz F = 20, 22, 24 GHz F = 26.5 GHz F = 27 GHz F = 17 - 27 GHz F = 17.5, 18, 20, 22, 24 GHz F = 26.5 GHz F = 17 - 27 GHz F = 17.5, 18, 20, 22, 24 GHz F = 26.5 GHz F = 17 - 27 GHz F = 18, 26.5 GHz F = 17 - 27 GHz F = 18, 26 GHz MINIMUM -17 18 17 --------27 -34.5 LIMITS TYPICAL 22 -23 -20 20 --15 --30 UNITS MAXIMUM ------12 10 -12 10 ----dB IRL Input Return Loss dB ORL Output Return Loss dB P1dB OTOI * Output Power @ 1dB Gain Compression Output Third Order Intercept dBm 37 -- dBm * Pin/tone = -7 dBm, Separation = 0.010 GHz 3 TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com Oct 2008 (c) Rev - TGA4502-SCC TABLE IV THERMAL INFORMATION Parameter Test Conditions Tchannel (oC) 150 JC Thermal Resistance Vd = 7 V Id = 760 mA (channel to backside of Pdiss = 5.3 W carrier) JC (C/W) 15.1 Tm (HRS) 1 E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil o CuMo Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. Median Lifetime (Tm) vs. Channel Temperature 1.E+13 1.E+12 Median Lifetime (Hours) 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 25 FET3 50 75 100 125 150 175 200 Channel Temperature (C) 4 TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com Oct 2008 (c) Rev - TGA4502-SCC Measured Fixtured Data Bias Conditions: Vd = 7 V, Id = 760 mA 30 24 18 12 Gain 30 24 12 6 18 6 0 -6 -12 -18 -24 -30 Inpu t t Output 0 -6 -12 -18 -24 -30 14 16 18 20 22 24 26 28 30 32 Frequency (GHz) 35 33 Psat P1dB (dBm) 31 29 27 25 23 21 17 18 19 20 21 22 23 24 25 26 27 P1dB Frequency (GHz) TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com Oct 2008 (c) Rev - Return Loss (dB) 5 Gain (dB) TGA4502-SCC Measured Fixtured Data Bias Conditions: Vd = 7 V, Id = 760 mA 40 39 38 OTOI (dBm) 37 36 35 34 18 20 22 Frequency (GHz) 70 60 IMD5 @ 22GHz 50 IMD3 & IMD5 (dBc) 40 30 20 10 0 10 12 14 16 18 20 22 24 26 Pout/Tone (dBm) 24 26 IMD3 @ 22GHz 6 TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com Oct 2008 (c) Rev - TGA4502-SCC Measured Fixtured Data Bias Conditions: Vd = 7 V, Id = 760 mA At Frequency: 18 GHz 30 25 Pout/tone (dBm) 20 15 10 5 0 -15 -10 -5 0 20 5 IMD3 & IMD5 (dBm) Pout/tone (dBm) -10 -25 -40 -55 -70 30 25 20 15 10 5 0 -15 At Frequency: 20 GHz 20 5 -10 -25 -40 -55 -70 -10 -5 0 5 10 Pin (dBm) IMD3 & IMD5 (dBm) 7 Single Tone Power IMD3 IMD5 Single Tone Power IMD3 IMD5 5 10 Pin (dBm) At Frequency: 24 GHz 30 25 Pout/tone (dBm) 20 15 10 5 0 -15 -10 -5 0 5 10 Pin (dBm) Single Tone Power IMD3 IMD5 At Frequency: 26 GHz 20 5 IMD3 & IMD5 (dBm) -10 -25 -40 -55 -70 30 25 Pout/tone (dBm) 20 15 10 5 0 -15 -10 -5 0 5 10 Single Tone Power IMD3 IMD5 20 5 -10 -25 -40 -55 IMD3 & IMD5 (dBm) -70 Pin (dBm) TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com Oct 2008 (c) Rev - TGA4502-SCC Recommended Assembly Diagram Vg (one side optional) 100 pF 0.01F de-Q cap (opt.) Vd (one side optional for Id < 780 mA) 100 pF Input TFN Output TFN 100 pF 100 pF Vg Vd Notes: 1. Connection to power det, ref diode not shown. 2. 0.1F cap on gate, drain lines not shown but required. 3. For high power operation, gate voltage is recommended from both sides. 4. Drain voltage is required from both sides for Id > 780 mA. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com Oct 2008 (c) Rev - TGA4502-SCC TGA4502 built-in power detector Vdet 100 pF Vbias 100 pF RF IN RF OUT TGA4502 with external test coupler (amplifier bias connections not shown) On-chip diode functions as envelope detector External coupler and DC bias required TGA4502 measured detector voltage offset vs output power with 20dB coupler: Vb=0.8V, f = 20GHz, Coupler loss is uncalibrated, 10K load 10 10 K Video out (Vdet) D e te c tor v olta g e (V ) 1 TGA4502 External DC bias 50 2 pF 0.1 RF OUT External coupler (-20 dB) RF OUT 0.01 8 10 12 14 16 18 20 22 24 26 28 30 32 Pout (dBm) 9 TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com Oct 2008 (c) Rev - TGA4502-SCC Mechanical Drawing 0.875 (0.034) 0.095 (0.004) 0.612 (0.024) 1.262 (0.046) 1.898 (0.075) 3.136 (0.123) 3.286 (0.129) 1.524 (0.060) 3 4 5 6 7 1.382 (0.544) 0.686 (0.027) 1 8 0.833 (0.033) 2 0.373 (0.015) 9 15 14 13 12 11 10 0.000 0.875 (0.034) 1.262 (0.050) 1.898 (0.075) 0.000 0.220 (0.009) 0.610 (0.024) 3.004 (0.118) 3.188 (0.126) 0.098 (.004) Units: Millimeters (inches) Thickness: 0.100 (0.004) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance +/- 0.051 (0.002) GND IS BACKSIDE OF MMIC Bond pad #1 Bond pad #2 Bond pad #3 Bond pad #4 Bond pad #5 Bond pad #6 Bond pad #7 Bond pad #8 (RF Input) (RF Output) VG2 DQ VG3 VD3 DET OUT PWR DET 0.200 x 0.100 (0.008 x 0.004) 0.200 x 0.100 (0.008 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.180 x 0.100 (0.007 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.175 x 0.100 (0.007 x 0.004) Bond pad #9 Bond pad #10 Bond pad #11 Bond pad #12 Bond pad #13 Bond pad #14 Bond pad #15 REF2 REF1 VD3 VG3 DQ VG2 REF3 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.180 x 0.100 (0.007 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com Oct 2008 (c) Rev - TGA4502-SCC Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (for 30 sec max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C. Ordering Information Part TGA4502 Package Style GaAs MMIC Die GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 11 TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com Oct 2008 (c) Rev - |
Price & Availability of TGA4502-SCC
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |